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PD- 91647C
IRF7523D1
FETKYTM MOSFET / Schottky Diode
q q q q q
Co-packaged HEXFET(R) Power MOSFET and Schottky Diode N-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology Micro8TM Footprint
A A S G
1
8
K K D D
VDSS = 30V RDS(on) = 0.11 Schottky Vf = 0.39V
2
7
3
6
4
5
Description
T op V ie w
The FETKYTM family of co-packaged HEXFETs and Schottky diodes offer the designer an innovative board space saving solution for switching regulator applications. Generation 5 HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications like cell phone, PDA, etc. The new Micro8TM package, with half the footprint area of the standard SO-8, provides TM the smallest footprint available in an SOIC outline. This makes the Micro8 an ideal device for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro8TM will allow it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards.
Micro8
TM
Absolute Maximum Ratings (TA = 25C unless otherwise noted)
Parameter
ID @ TA = 25C ID @ TA = 70C I DM PD @TA = 25C PD @TA = 70C VGS dv/dt TJ, TSTG Continuous Drain Current, VGS@10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Junction and Storage Temperature Range
Maximum
2.7 2.1 21 1.25 0.8 10 20 6.2 -55 to +150
Units
A
W W/C V V/ns C
Thermal Resistance Ratings
Parameter
RJA Junction-to-Ambient
Maximum
100
Units
C/W
Notes: Repetitive rating; pulse width limited by maximum junction temperature (see figure 11) ISD 1.7A, di/dt 120A/s, VDD V(BR)DSS, TJ 150C Pulse width 300s; duty cycle 2% When mounted on 1 inch square copper board to approximate typical multi-layer PCB thermal resistance
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1
3/17/99
IRF7523D1
MOSFET Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter V(BR)DSS RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 30 -- -- 1.0 1.9 -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. -- 0.090 0.140 -- -- -- -- -- -- 7.8 1.2 2.5 4.7 10 12 5.3 210 80 32 Max. Units Conditions -- V VGS = 0V, ID = 250A 0.130 VGS = 10V, ID = 1.7A 0.190 VGS = 4.5V, ID = 0.85A -- V VDS = VGS, ID = 250A -- S VDS = 10V, ID = 0.85A 1.0 VDS = 24V, VGS = 0V A 25 VDS = 24V, VGS = 0V, TJ = 125C -100 VGS = -20V nA 100 VGS = 20V 12 ID = 1.7A 1.8 nC VDS = 24V 3.8 VGS = 10V (see figure 6) -- VDD = 15V -- ID = 1.7A ns -- RG = 6.1 -- RD = 8.7 -- VGS = 0V -- pF VDS = 25V -- = 1.0MHz (see figure 5) Conditions
2
MOSFET Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units IS Continuous Source Current (Body Diode) -- -- 1.25 A I SM Pulsed Source Current (Body Diode) -- -- 21 VSD Body Diode Forward Voltage -- -- 1.2 V trr Reverse Recovery Time (Body Diode) -- 40 60 ns Q rr Reverse Recovery Charge -- 48 72 nC
TJ = 25C, IS = 1.7A, VGS = 0V TJ = 25C, IF = 1.7A di/dt = 100A/s
Schottky Diode Maximum Ratings
IF(av)
I SM
Parameter Max. Average Forward Current Max. peak one cycle Non-repetitive Surge current
Max. Units. Conditions 1.9 50% Duty Cycle. Rectangular Wave, TA = 25C A 1.3 TA = 70C See Fig.14 120 5s sine or 3s Rect. pulse Following any rated 11 10ms sine or 6ms Rect. pulse load condition & A with VRRM applied
Schottky Diode Electrical Specifications
V FM Parameter Max. Forward voltage drop Max. Units 0.50 0.62 V 0.39 0.57 0.06 mA 16 92 pF 3600 V/ s Conditions IF = 1.0A, TJ = 25C IF = 2.0A, TJ = 25C IF = 1.0A, TJ = 125C IF = 2.0A, TJ = 125C . VR = 30V TJ = 25C TJ = 125C VR = 5Vdc ( 100kHz to 1 MHz) 25C Rated VR
IRM Ct dv/dt
Max. Reverse Leakage current Max. Junction Capacitance Max. Voltage Rate of Charge
2
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2 Power Mosfet Characteristics
100
VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V TOP
IRF7523D1
100
I D , D rain-to-S ource C urrent (A )
I D, D rain-to-S ource C urrent (A )
VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V TOP
10
10
3.0V
1
1
3.0V
0.1 0.1 1
20 s P U LS E W ID TH TJ = 25C A
10
0.1 0.1 1
20 s P U LS E W ID TH TJ = 150C A
10
V D S , D rain-to-S ource V oltage (V )
V D S, D rain-to-S ource V oltage (V )
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
100
I D , D ra in -to-S o urc e C urren t (A )
T J = 2 5 C
10
I S D , R everse D rain C urrent (A )
10
T J = 1 5 0 C
TJ = 150 C T J = 25C
1
1
0.1 3.0 3.5 4.0 4.5
V DS = 10V 2 0 s P U L S E W ID T H
5.0 5.5 6.0
A
0.1 0.4 0.8 1.2 1.6
V G S = 0V
A
2.0
V G S , G a te -to -S o u rc e V o lta g e (V )
V S D , S ource-to-D rain V oltage (V )
Fig 3. Typical Transfer Characteristics
Fig 4. Typical Source-Drain Diode Forward Voltage
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3
IRF7523D1
Power Mosfet Characteristics
RDS (on) , Drain-to-Source On Resistance ()
2.0
R D S (on ) , D rain-to-S ource O n R esistance (N orm alized)
I D = 1.7A
0.3
1.5
VGS = 10V
0.2
1.0
0.1
0.5
VGS = 4.5V
0.0 -60 -40 -20 0 20 40 60 80
V G S = 10V
100 120
140 160
A
0.0 0 2 4 6 8
A
T J , Junction T em perature (C )
I
, , Drain Current (A)
Fig 5. Normalized On-Resistance Vs. Temperature
Fig 6. Typical On-Resistance Vs. Drain Current
0.16
100
RDS (on) , Drain-to-Source On Resistance ()
O P E R A TIO N IN TH IS A R E A LIM ITE D B Y R D S (on)
0.14
I D , D rain C urrent (A )
10
10 s
0.12
100 s
I
0.10
= 2.7A
1
1m s
0.08
0.06 2 6 10 14
A
0.1 1
T A = 25C T J = 150C S ingle P ulse
10
10m s
A
100
V
/5
, Gate-to-Source Voltage (V)
V D S , D rain-to-S ource V oltage (V )
Fig 7. Typical On-Resistance Vs. Gate Voltage
Fig 8. Maximum Safe Operating Area
4
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IRF7523D1
Power Mosfet Characteristics
400
V G S , G ate-to-S ource V oltage (V )
V GS C iss C rss C oss
= = = =
0V , f = 1M H z C gs + C gd , C ds S H O R TE D C gd C ds + C gd
20
I D = 1.7A V D S = 24V V D S = 15V
16
C , C apacitanc e (pF )
300
C is s C os s
12
200
8
100
C rs s
4
0 1 10 100
A
0 0 2 4 6
FO R TE S T C IR C U IT S E E FIG U R E 9
8 10 12
A
V D S , D rain-to-S ource V oltage (V )
Q G , Total G ate C harge (nC )
Fig 9. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 10. Typical Gate Charge Vs. Gate-to-Source Voltage
1000
Thermal Response (Z thJC )
100 D = 0.50 0.20 10 0.10 0.05 0.02 0.01 1 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.01 0.1 1 10 100 P DM t1 t2
0.1 0.00001
0.0001
0.001
t1 , Rectangular Pulse Duration (sec)
Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRF7523D1
Schottky Diode Characteristics
10
100
Reverse Current - IR (mA)
10
TJ = 150C 125C
1
100C 75C 50C
0.1
In sta n ta n e o u s F o rw a rd C u rre n t - I F (A )
0.01
25C
0.001
0.0001 0 5 10 15 20 25 30
)
Reverse Voltage - V R (V)
1
T J = 1 5 0 C T J = 1 2 5 C T J = 2 5 C
Fig. 13 - Typical Values of Reverse Current Vs. Reverse Voltage
A llow ab le A m b ient Tem p era ture - (C )
160 140 120 100 80 60 40 20 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 D D D D D = 3/4 = 1/2 = 1/3 = 1/4 = 1/5 V r = 80% R ated R t h JA = 1 00C /W Sq uare wave
0.1 0.0 0.2 0.4 0.6 0.8 1.0
F o rw a rd V o lta g e D ro p - V F M VF )(V) Forward Voltage Drop - (V
DC
Fig. 12 -Typical Forward Voltage Drop Characteristics
A
A v era ge F orw ard C urrent - I F(AV ) (A )
Fig.14 - Maximum Allowable Ambient Temp. Vs. Forward Current
6
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IRF7523D1 Micro8TM Package Details
LE AD A S S IG N M EN TS D -B3 DDDD 8765 3 E -A1234 SSSG S1 G 1 S 2 G 2 8765 H 0.2 5 (.0 1 0) M A M S IN G LE 1234 DUAL 1234 D1 D1 D2 D2 8765
D IM IN C H E S M IN M AX M IL LIM E TE R S M IN M AX
A A1 B C D e e1 E H L
.0 36 .0 04 .0 10 .0 05 .1 16
.0 44 .0 08 .0 14 .0 07 .1 20
0 .9 1 0 .1 0 0 .2 5 0 .13 2 .95
1 .11 0 .20 0 .36 0.18 3.05
.0 25 6 B A SIC .0 12 8 B A SIC .1 16 .1 88 .0 16 0 .1 20 .1 98 .0 26 6
0.6 5 BA S IC 0.3 3 BA S IC 2.9 5 4 .78 0 .4 1 0 3 .0 5 5 .03 0 .66 6
e 6X e1 A -CB 8X 0.08 (.0 03) M A1 C AS BS 0.10 (.00 4) L 8X C 8X
R EC O M M E N D E D F O O TP R IN T 1.04 ( .0 4 1 ) 8X 0 .3 8 8X ( .0 15 )
3 .2 0 ( .1 26 )
4.24 5 .2 8 ( .16 7 ) ( .2 08 )
NO TE S : 1 D IM E N S IO N IN G A N D T O L E R A N C IN G P E R A N S I Y 1 4 .5 M -1 9 8 2 . 2 C O N T R O L L IN G D IM E N S IO N : IN C H . 3 D IM E N S IO N S D O N O T IN C L U D E M O L D F L A S H .
0.65 6X ( .02 56 )
Part Marking
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7
IRF7523D1
Micro8TM Tape & Reel
T ER M IN AL N U M B E R 1
12.3 ( .48 4 ) 11.7 ( .46 1 )
8.1 ( .31 8 ) 7.9 ( .31 2 )
F E ED D IR EC T IO N
NOTES: 1 . O U T L IN E C O N F O R M S TO E IA -4 8 1 & E IA -5 4 1 . 2 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R .
330.00 (12 .9 92 ) MAX.
14.40 ( .5 66 ) 12.40 ( .4 88 ) NO TES : 1. C O N T R O LL IN G D IM E N S IO N : M ILL IM E T ER . 2. O U T L IN E C O N F O R M S T O E IA -481 & E IA -541.
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 221 8371 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 http://www.irf.com/ Data and specifications subject to change without notice . 3/99
8
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